FDG330P applications ? battery management ? load switch features ? ?2 a, ?12 v. r ds(on) = 110 m ? @ v gs = ?4.5 v r ds(on) = 150 m ? @ v gs = ?2.5 v r ds(on) = 215 m ? @ v gs = ?1.8 v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? compact industry standard sc70-6 surface mount package sc70-6 d d g d d s pin 1 3 5 6 4 1 2 3 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?12 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?2 a ? pulsed ?6 power dissipation for single operation (note 1a) 0.75 w p d (note 1b) 0.48 t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient note 1b) 260 c/w package marking and ordering information device marking device reel size tape width quantity .30 FDG330P 7?? 8mm 3000 units 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?12 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?2.7 mv/ c i dss zero gate voltage drain current v ds = ?10 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.7 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 2.3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?2.0 a v gs = ?2.5 v, i d = ?1.7 a v gs = ?1.8 v, i d = ?1.4 a v gs = ?4.5 v, i d = ?2.0 a, t j = 125c 84 107 145 98 110 150 215 148 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?6 a g fs forward transconductance v ds = ?5 v, i d = ?2.0 a 6.8 s dynamic characteristics c iss input capacitance 477 pf c oss output capacitance 186 pf c rss reverse transfer capacitance v ds = ?6.0 v, v gs = 0 v, f = 1.0 mhz 124 pf switching characteristics (note 2) t d(on) turn?on delay time 10 20 ns t r turn?on rise time 11 20 ns t d(off) turn?off delay time 12 22 ns t f turn?off fall time v dd = ?6.0 v, i d = 1 a, v gs = ?4.5 v, r gen = 6 ? 18 32 ns q g total gate charge 5 7 nc q gs gate?source charge 0.8 nc q gd gate?drain charge v ds = ?6.0 v, i d = ?2.0 a, v gs = ?4.5 v 1.4 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.62 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.62 a (note 2) ?0.7 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a.) 170c/w when mounted on a 1 in 2 pad of 2 oz. copper. b.) 260c/w when mounted on a minimum pad. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com FDG330P product specification
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